Datasheet4U Logo Datasheet4U.com

2SK1039 - N-Channel MOSFET Transistor

Description

Drain Current ID=8A@ TC=25℃ Drain Source Voltage- : VDSS=400V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VA

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK1030 Silicon N-Channel Power F-MOS FET Panasonic
2SK1030A Silicon N-Channel Power F-MOS FET Panasonic
2SK1035 SILICON N CHANNEL POWER F MOSFET Panasonic Semiconductor
2SK1006 N-CHANNEL SILICON POWER MOSFET Fuji Electric
2SK1006-01MR N-CHANNEL SILICON POWER MOSFET Fuji Electric

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK1038 N-Channel MOSFET Transistor
2SK1007 N-Channel MOSFET Transistor
2SK1009 N-Channel MOSFET Transistor
2SK1010 N-Channel MOSFET Transistor
2SK1011 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W 2SK1039 isc website：www.iscsemi.
Published: |