2SD861 transistor equivalent, silicon npn transistor.
*Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VA.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min)
*High Power Dissipation-
: PC= 45W@ TC= 25℃
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for audio frequency pow.
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