2SD692 transistor equivalent, silicon npn darlingtion power transistor.
*Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
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*Built-in Base-Emitter Shunt Resistors
*High DC current gain-
hFE = 1000 (Min) @ IC =1 Adc
*Collector-Emitter Breakdown Voltage-
V(BR)CEO= 80V(Min)
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
perf.
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