2SD525 transistors equivalent, silicon npn power transistors.
*Designed for power amplifier applications.
*Recommended for 30W high fidelity audio frequency
amplifier output .
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max) @IC= 4.0A
*Complement to Type 2SB595
*Minimum Lot-to-Lot variations for robust device
performance and reliabl.
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