2SD476N transistor equivalent, silicon npn power transistor.
*Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC=2A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V (Min)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for .
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