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2SD427 - Silicon NPN Power Transistors

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) High Power Dissipation- : PC= 80W(Max)@TC=25℃ Complement to Type 2SB557 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power amplifier applications.

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ ·Complement to Type 2SB557 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 50W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 80 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD427 isc website：www.
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