2SD363 transistor equivalent, silicon npn power transistor.
*Designed for B/W TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
*Collector Power Dissipation-
: PC= 40W(Max)@ TC= 25℃
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for B/W TV ho.
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