2SD2642 transistor equivalent, silicon npn darlington power transistor.
*Designed for audio, series regulator and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
P.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min)
*High DC Current Gain-
: hFE= 5000( Min.) @(IC= 5A, VCE= 4V)
*Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 5A, IB= 5mA)
*Complement to Type 2SB1687
*Mini.
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