2SD2531 transistor equivalent, silicon npn power transistor.
*Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Low Collector Saturation Voltage-
: VCE(sat)= 1.0 (Max)@ IC= 2.5A
*High Power Dissipation-
: PC= 25W@ TC= 25℃
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for power ampli.
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