2SD2449
2SD2449 is Silicon NPN Darlington Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
- High DC Current Gain-
: h FE= 3000( Min.) @(IC= 8A, VCE= 5V)
- Low Collector Saturation Voltage-
: VCE(sat)= 3.0V(Max)@ (IC= 8A, IB= 8m A)
- plement to Type 2SB1594
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature
-55~150
℃...
