Part 2SD2449
Description Silicon NPN Darlington Power Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 219.94 KB
Inchange Semiconductor
2SD2449

Overview

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) High DC Current Gain- : hFE= 3000( Min.) @(IC= 8A, VCE= 5V) Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max)@ (IC= 8A, IB= 8mA) Complement to Type 2SB1594 Minimum Lot-to-Lot variations for robust device performance and reliable operation.