2SD2422 transistor equivalent, silicon npn power transistor.
*High power switching applications
*Hammer driver,pulse motor driver applications
ABSOLUTE MAXIMUM RATINGS(Ta=2.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max.) @IC= 3A
*High DC Current Gain
: hFE= 1000(Min) @ IC= 2A, VCE= 3V
*Minimum Lot-to-Lot variations for robust devic.
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