2SD218 transistor equivalent, silicon npn power transistor.
*Low saturation voltage
*Excellent current gain linearity
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V (Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V (Max.)@ IC= 7A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*.
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