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2SD218 - Silicon NPN Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 7A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low saturation voltage Excellent current gain

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low saturation voltage ·Excellent current gain linearity ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD218 isc website：www.iscsemi.
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