2SD2033 transistor equivalent, silicon npn power transistor.
*Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
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*Good Linearity of hFE
* Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
*Complement to Type 2SB1353
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use in .
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