2SD1932 transistor equivalent, power transistor.
*Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
*High DC Current Gain-
: hFE= 1000(Min)@ (VCE= 3V, IC= 2A)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for power.
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