2SD1912 transistor equivalent, silicon npn power transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
*Wide Area of Safe Operation
*Low Collector Saturation Voltage
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
2SD1.
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