2SD1713 transistor equivalent, power transistor.
*Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
*Good Linearity of hFE
*Wide Area of Safe Operation
*Complement to Type 2SB1158
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLIC.
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