2SD1670 transistor equivalent, power transistor.
*For low speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
U.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
*High DC Current Gain-
: hFE= 1000( Min.) @ IC= 10A
*Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 10A
*Minimum Lot-to-Lot variations for robust device
perform.
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