2SD1606 transistor equivalent, silicon npn power transistor.
*Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VAL.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
*High DC Current Gain
: hFE= 1000(Min) @IC= 3A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for low frequency po.
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