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2SD1587 - Silicon NPN Power Transistor

Description

High Collector Current:: IC= 2.0A Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 500mA Complement to Type 2SB1096 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current:: IC= 2.0A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 500mA ·Complement to Type 2SB1096 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 2.0 A ICM Collector Current-Peak 3.0 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.0 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1587 isc website：www.
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