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2SD1575 Inchange Semiconductor Silicon NPN Transistor

Description ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·High Reliability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCES Collector-Emitter Vol...
Features OL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 750V ; IE= 0 VCB= 1200V ; IE= 0 50 μA 1.0 mA IEBO Emitter Cutoff...

Datasheet PDF File 2SD1575 Datasheet - 209.00KB

2SD1575  






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