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2SD1528 - Silicon NPN Power Transistor

Description

Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) Good Linearity of hFE High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

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Datasheet Details

Part number 2SD1528
Manufacturer Inchange Semiconductor
File Size 214.43 KB
Description Silicon NPN Power Transistor
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isc Silicon NPN Power Transistor 2SD1528 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier,power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 6 A 30 W 1.
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