isc Silicon NPN Darlington Power Transistor
2SD1525
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 20A, IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 20A, IB= 0.2A
ICBO
Collector Cutoff current
VCB= 100V, IE= 0
IEBO
Emitter Cutoff current
VEB= 5V, IC= 0
hFE-1
DC Current Gain
IC= 20A; VCE= 5V
hFE-2
DC Current Gain
IC= 30A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 10A
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IB1 = IB2= 10mA; VCC= 50V;
RL= 10Ω
MIN TYP. MAX UNIT
100
V
1.5
V
2.5
V
0.1 mA
10 mA
1000
200
3.0
V
10
MHz
500
pF
1.5
μs
10
μs
1.5
μs
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our products.
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