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2SD1525 Datasheet Preview

2SD1525 Datasheet

Silicon NPN Darlington Power Transistor

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isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·High DC Current Gain
: hFE= 1000(Min.)@ IC= 20A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
30
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
5
A
150
W
150
Tstg
Storage Temperature Range
-55~150
2SD1525
isc websitewww.iscsemi.com
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2SD1525 Datasheet Preview

2SD1525 Datasheet

Silicon NPN Darlington Power Transistor

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isc Silicon NPN Darlington Power Transistor
2SD1525
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 20A, IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 20A, IB= 0.2A
ICBO
Collector Cutoff current
VCB= 100V, IE= 0
IEBO
Emitter Cutoff current
VEB= 5V, IC= 0
hFE-1
DC Current Gain
IC= 20A; VCE= 5V
hFE-2
DC Current Gain
IC= 30A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 10A
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IB1 = IB2= 10mA; VCC= 50V;
RL= 10Ω
MIN TYP. MAX UNIT
100
V
1.5
V
2.5
V
0.1 mA
10 mA
1000
200
3.0
V
10
MHz
500
pF
1.5
μs
10
μs
1.5
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SD1525
Description Silicon NPN Darlington Power Transistor
Maker Inchange Semiconductor
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