2SD1525 transistor equivalent, silicon npn darlington power transistor.
*Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
.
*High DC Current Gain
: hFE= 1000(Min.)@ IC= 20A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high current.
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