2SD1378 transistor equivalent, power transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
*Low Saturation Voltage -
: VCE(sat)= 0.4V(Max)@ IC= 0.5A
*Complement to Type 2SB1007
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLI.
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