2SD1351 transistors equivalent, silicon npn power transistors.
*Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
*Collector Power Dissipation-
: PC= 30W@ TC= 25℃
*Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ (IC= 2A, IB= 0.2A)
*Minimum Lot-to-Lot variations for robust device
.
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