2SD1245 transistor equivalent, silicon npn power transistor.
*Designed for general purpose amplifier and Motor control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
*High DC Current Gain
: hFE= 500(Min) @IC= 2A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for general purp.
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