2SD1172 transistor equivalent, silicon npn transistor.
*Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE.
*High Breakdown Voltage-
: VCBO= 1500V (Min)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 4.0V(Max.)@ IC= 2.5A
*Built-in Damper Diode
*Wide area of safe operation
*Minimum Lot-to-Lot variations for robust device
performance .
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