2SD1126 transistor equivalent, silicon npn darlington power transistor.
*Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
*High DC Current Gain
: hFE= 1000(Min) @IC= 5A
*Low Saturation Voltage
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*D.
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