2SD1044 transistor equivalent, silicon npn darlington power transistor.
*Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V.
*High DC Current Gain
: hFE= 700(Min.)@ IC= 1A, VCE= 4V
*High Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 80V(Min)
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
.
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