Datasheet4U Logo Datasheet4U.com

2SD1044 - Silicon NPN Darlington Power Transistor

Description

High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V High Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifie

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1040 NPN Transistor INCHANGE
2SD1046 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SD1046 NPN Transistor INCHANGE
2SD1046 SILICON POWER TRANSISTOR SavantIC
2SD1047 NPN Transistor INCHANGE

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD103 Silicon NPN Power Transistors
2SD1032 Silicon NPN Power Transistor
2SD1071 Silicon NPN Transistor
2SD1113 Silicon NPN Power Transistor
2SD1117 Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1044 isc website：www.
Published: |