2SC898 transistor equivalent, silicon npn power transistor.
*Designed for amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collect.
*Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V (Min)
*Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 6A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
*Designed for .
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