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2SC5900 - Silicon NPN Transistor

Description

High Breakdown Voltage- : VCBO= 1700V (Min) High Switching Speed High Reliability APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Vol

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC5900 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 3.0 W 80 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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