2SC5890 transistor equivalent, silicon npn rf transistor.
*Designed for use in UHF ~ VHF wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI.
*High Gain Bandwidth Product
fT = 7.8 GHz TYP.
*High power gain and low noise figure ;
PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable op.
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