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2SC5706 - Silicon NPN Power Transistor

Description

Large current capacitance High-speed switching 100% avalanche tested High allowable power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SA2039 APPLICATIONS DC/DC converter,relay drivers,lamp driver

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5706 DESCRIPTION ·Large current capacitance ·High-speed switching ·100% avalanche tested ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SA2039 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 7.5 A 15 W 0.
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