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2SC4757 Silicon NPN Power Transistor

2SC4757 Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Low Saturation Voltage. 100% avalanche tested. Minimum Lot-to-.

2SC4757 Applications

* Horizontal deflection output for high resolution display.
* High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5

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Datasheet Details

Part number
2SC4757
Manufacturer
Inchange Semiconductor
File Size
192.44 KB
Datasheet
2SC4757_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SC4757-like datasheet