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2SC3841 - Silicon NPN Transistor

Description

fT = 4 GHz TYP.

COB = 1.5 pF TYP.

Low Base Time Constant: rbb’

CC= 4.0 ps TYP.

100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3841 DESCRIPTION ·High Current-Gain Bandwidth Product: fT = 4 GHz TYP. ·Low Output Capacitance- COB = 1.5 pF TYP. ·Low Base Time Constant: rbb’ • CC= 4.0 ps TYP. ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as UHF oscillators and a UHF mixer in a tuner of a TV receiver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 30 mA 0.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.
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