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2SC3754 - Silicon NPN Power Transistor

Description

Wide Area of Safe Operation High Breakdown Voltage- : V(BR)CBO= 1500V(Min) High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for regulator application

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isc Silicon NPN Power Transistor DESCRIPTION ·Wide Area of Safe Operation ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Pulse 12 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2 A 60 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC3754 isc website：www.iscsemi.
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