2SC3719 transistor equivalent, power transistor.
*Designed for high speed switching and horizontal deflection
output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V (Min)
*High Switching Speed
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for hi.
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