2SC3565 transistor equivalent, power transistor.
*Designed for use in high frequency high voltage amplifier
and TV viedo output applications.
ABSOLUTE MAXIMUM RATIN.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
*Good Linearity of hFE
*Low Saturation Voltage
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use in .
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