2SC3518-Z Datasheet PDF - Inchange Semiconductor Silicon NPN Power Transistor Specs

2SC3518-Z - Silicon NPN Power Transistor

Datasheet Summary

Description

Low collector saturation voltage High DC current gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated c

Datasheet Details

Part number	2SC3518-Z
Manufacturer	Inchange Semiconductor
File Size	217.79 KB
Description	Silicon NPN Power Transistor
Datasheet	2SC3518-Z Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak NOTE1 PC Collector Power Dissipation @Ta=25℃ NOTE2 TJ Junction Temperature 7 A 2 W 150 ℃ Tstg Storage Temperature Range NOTE1:PW≤300ms,Duty cycle ≤10% NOTE2:Printing boarding mounted -55~150 ℃ 2SC3518-Z

Published: Nov 9, 2016 |