2SC3357 transistor equivalent, silicon npn rf transistor.
*Designed for low noise amplifier at VHF, UHF and CATV
band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
V.
*Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust devic.
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