2SC3356 transistor equivalent, silicon npn transistor.
*Designed for low noise amplifier at VHF, UHF and CATV
band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
V.
*Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
*High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
*Minimum Lot-to-Lot variations for robust device performance and reliabl.
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