2SC2983 transistor equivalent, silicon npn power transistor.
*Designed for power amplifier and driver stage amplifier
applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
P.
*Excellent linearity of hFE
*Low collector-to-emitter saturation voltage
*Fast switching speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed .
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