| Description | ·Silicon NPN epitaxial type ·Local oscillator wide band amplifier ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF/VHF frequency converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Vo... |
| Features |
10V; IE= 0
1.0
V
0.5 μA
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
40
fT
Current-Gain—Bandwidth Product
IC= 10mA ; VCE= 10V
1200
MHz
COB
Output Capacitance
CG
Conversion Gain
NF
Noise Figure
IE= 0 ; VCB= 10V;f= 1.0MHz
VCC=12V,IC=2mA;f=200MHz; fosc=230MHz;
VCC=12V,IC=2mA;f=200MHz; fosc=230MHz;
1.5 pF
21
dB
6.5
dB
NOTICE： ISC re...
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| Datasheet |
 2SC2735 Datasheet - 179.57KB |
