2SC2716 transistor equivalent, silicon npn power transistor.
*Designed for RF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
.
*High Power Gain: Gp≥12dB,f= 27MHz, PO= 16W
*High Reliability
APPLICATIONS
*Designed for RF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collecto.
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