2SC1881K transistor equivalent, silicon npn power transistor.
*Designed for High gain amplifier power switching
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETE.
*High DC Current Gain-
: hFE = 1000(Min)@ IC= 1.5A
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.2V(Max)@ IC= 2.5A
*Minimum Lot-to-Lot variations for robust dev.
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