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2SC1881K - Silicon NPN Power Transistor

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.2V(Max)@ IC= 2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.2V(Max)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for High gain amplifier power switching applications.
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