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2SC1728 - Silicon NPN Power Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) Low Saturation Voltage - : VCE(sat)= 0.3V(Max)@ IC=1A, IB= 50mA High DC Current Gain- : hFE= 98-649@ IC= 0.1A APPLICATIONS

applications.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1728 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) ·Low Saturation Voltage - : VCE(sat)= 0.3V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain- : hFE= 98-649@ IC= 0.1A APPLICATIONS ·Designed for audio frequency amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6V ICM Collector Current-Peak 1.5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 0.95 W 7.9 150 ℃ Tstg Storage Temperature Range -50~150 ℃ isc website：www.iscsemi.
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