2SC1061 transistors equivalent, silicon npn power transistors.
*Designed for use in low frequency power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETE.
*Low Collector Saturation Voltage-
:VCE(sat)= 1.0(V)(Max)@ IC= 2A
*DC Current Gain-
: hFE= 35-320 @ IC= 0.5A
*Complement to Type 2SA671
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS .
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