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2SC1061 - Silicon NPN Power Transistors

Description

Low Collector Saturation Voltage- :VCE(sat)= 1.0(V)(Max)@ IC= 2A DC Current Gain- : hFE= 35-320 @ IC= 0.5A Complement to Type 2SA671 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low frequency power ampli

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- :VCE(sat)= 1.0(V)(Max)@ IC= 2A ·DC Current Gain- : hFE= 35-320 @ IC= 0.5A ·Complement to Type 2SA671 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
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