2SB941 transistor equivalent, silicon pnp power transistor.
*Designed for low-frequency power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
.
*Low Collector Saturation Voltage-
: VCE(sat)= -1.2V(Max)@IC= -3A
*Good Linearity of hFE
*Complement to Type 2SD1266
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for lo.
Image gallery
TAGS