2SB900 transistor equivalent, silicon pnp power transistor.
*Designed for power amplifier and switching applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VAL.
*Collector-Emitter BreakdownVoltage-
: V(BR)CEO= -50V(Min.)
*Low Collector Saturation Voltage-
: VCE(sat)= -1.0(Max.) @IC= -2A
*Wide area of safe operation
*Good Linearity of hFE
*Minimum Lot-to-Lot variations for robust device
pe.
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