2SB897 transistor equivalent, silicon pnp power transistor.
*Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM.
*High DC Current Gain-
: hFE = 1000(Min)@ IC= -10A
*Low Collector Saturation Voltage-
: VCE(sat) = -1.5V(Max.) @IC= 10A
*Complement to Type 2SD1210
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
A.
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