2SB834 transistors equivalent, silicon pnp power transistors.
*Designed for use in audio frequency power amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMET.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max) @IC= -3.0A
*Complementary to 2SD880
*Minimum Lot-to-Lot variations for robust device performance
and reliabl.
Image gallery
TAGS
Download (Size : 218.17KB)